Surface conductivity of diamond: a novel transfer doping mechanism

Ristein J, Ley L (2006)

Publication Type: Journal article

Publication year: 2006


Publisher: Elsevier

Book Volume: 376-377

Pages Range: 262

DOI: 10.1016/j.physb.2005.12.068


A novel doping mechanism is presented for the case of diamond that does not rely on the incorporation of dopant atoms into the crystal lattice as in conventional doping. Instead, adsorbates provide the acceptor level into which electrons are transferred, leading to a two-dimensional subsurface hole accumulation layer with an areal concentration of up to 10 13 cm -2. Two acceptor systems are discussed. One is based on the charge exchange between diamond and solvated H + ions in a water layer that forms spontaneously on all surfaces in air. The other relies on the high electron affinity of fullerenes and fluorinated fullerenes that act as efficient acceptors when physisorbed at the surface. In either case, the extremely low ionization energy of hydrogen terminated diamond that is matched by no other semiconductor is a necessary requirement for transfer doping. © 2006 Elsevier B.V. All rights reserved.

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How to cite


Ristein, J., & Ley, L. (2006). Surface conductivity of diamond: a novel transfer doping mechanism. Physica B-Condensed Matter, 376-377, 262.


Ristein, Jürgen, and Lothar Ley. "Surface conductivity of diamond: a novel transfer doping mechanism." Physica B-Condensed Matter 376-377 (2006): 262.

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