Nanometer-scale field-induced oxidation if Si(111): H by a conducting-probe scanning force microscope: Doping dependence and kinetics

Hundhausen M, Ley L (1995)

Publication Type: Journal article

Publication year: 1995

Journal

Applied Physics Letters American Institute of Physics (AIP)

Publisher: American Institute of Physics (AIP)

Book Volume: 67

Pages Range: 3144

Journal Issue: 21

DOI: 10.1063/1.114861

Abstract

Hydrogen-terminated Si(111) was patterned on the nanometer scale by field-induced oxidation using a biased conducting-probe scanning force microscope. The kinetics of oxide growth as well as its dependence on doping are investigated. Field-induced oxidation is observed for voltages exceeding a doping dependent threshold above which oxidation kinetics follows a power law.© 1995 American Institute of Physics.

Authors with CRIS profile

Martin Hundhausen Lehrstuhl für Laserphysik Lothar Ley Naturwissenschaftliche Fakultät

How to cite

APA:

Hundhausen, M., & Ley, L. (1995). Nanometer-scale field-induced oxidation if Si(111): H by a conducting-probe scanning force microscope: Doping dependence and kinetics. Applied Physics Letters, 67(21), 3144. https://doi.org/10.1063/1.114861

MLA:

Hundhausen, Martin, and Lothar Ley. "Nanometer-scale field-induced oxidation if Si(111): H by a conducting-probe scanning force microscope: Doping dependence and kinetics." Applied Physics Letters 67.21 (1995): 3144.

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