Hydrogenation of 6H-SiC as a Surface Passivation Stable in Air

Ristein J, Ley L (2001)

Publication Type: Journal article

Publication year: 2001


Publisher: Elsevier

Book Volume: 10

Pages Range: 1291

DOI: 10.1016/S0925-9635(00)00529-X


We have terminated the hexagonal (0001) and (0001̄) surfaces of 6H-SiC with a monolayer of hydrogen by exposing the SiC crystal to pure hydrogen at elevated temperatures. The surfaces exhibit sharp, background-free, and unreconstructed LEED patterns and the photoemission spectra show only bulk-related Si and C components and give no indication of additional unwanted absorbates. On the Si-terminated (0001) surface, a sharp doublet at 2130 cm -1 with a splitting of 6 cm -1 is observed in surface-sensitive infrared spectroscopy, which is due to monohydride Si-H stretching modes. The origin of the splitting is discussed. The hydrogenated surfaces are passivated chemically and electronically. The oxygen uptake is less than 2 at.% after 2 h air exposure without any sign of Si-O or C-O bond formation. The surface Fermi level is unpinned and exhibits its bulk position on n- and p-type samples. © 2001 Elsevier Science B.V. All rights reserved.

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Ristein, J., & Ley, L. (2001). Hydrogenation of 6H-SiC as a Surface Passivation Stable in Air. Diamond and Related Materials, 10, 1291. https://doi.org/10.1016/S0925-9635(00)00529-X


Ristein, Jürgen, and Lothar Ley. "Hydrogenation of 6H-SiC as a Surface Passivation Stable in Air." Diamond and Related Materials 10 (2001): 1291.

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