Electronic and chemical passivation of hexagonal 6H-SiC surfaces by hydrogen termination

Ristein J, Ley L (2001)

Publication Type: Journal article

Publication year: 2001

Journal

Applied Physics Letters American Institute of Physics (AIP)

Publisher: American Institute of Physics (AIP)

Book Volume: 78

Pages Range: 1216

DOI: 10.1063/1.1351845

Abstract

Hydrogenation of 6H-SiC (0001) and (0001̄) is achieved by high-temperature hydrogen treatment. Both surfaces show a low-energy electron diffraction pattern representative of unreconstructed surfaces of extremely high crystallographic order. On SiC(0001), hydrogenation is confirmed by the observation of sharp Si-H stretching modes. The absence of surface band bending for n-and p-type samples is indicative of electronically passivated surfaces with densities of charged surface states in the gap of below 7 × 1010 cm-2 for p-type and 1.7 × 1012 cm-2 for n-type samples, respectively. Even after two days in air, the surfaces show no sign of surface oxide in x-ray photoelectron spectroscopy. © 2001 American Institute of Physics.

Authors with CRIS profile

Jürgen Ristein Lehrstuhl für Laserphysik Lothar Ley Naturwissenschaftliche Fakultät

How to cite

APA:

Ristein, J., & Ley, L. (2001). Electronic and chemical passivation of hexagonal 6H-SiC surfaces by hydrogen termination. Applied Physics Letters, 78, 1216. https://doi.org/10.1063/1.1351845

MLA:

Ristein, Jürgen, and Lothar Ley. "Electronic and chemical passivation of hexagonal 6H-SiC surfaces by hydrogen termination." Applied Physics Letters 78 (2001): 1216.

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