Self-Assembled Monolayer Field-Effect Transistors based on Oligo-9,9’-dioctylfluorene Phosphonic Acids

Gothe B, de Roo T, Will J, Unruh T, Mecking S, Halik M (2017)

Publication Type: Journal article

Publication year: 2017

Journal

Nanoscale Royal Society of Chemistry

Book Volume: 9

Pages Range: 18584-18589

Journal Issue: 47

DOI: 10.1039/c7nr06090d

Abstract

The use of functional oligomers of pi-conjugated oligofluorenes led to a region-selective assembly of amorphous monolayers which exhibit robust lateral charge transport pathways in self-assembled monolayer field-effect transistors over long distances and even in mixed monolayers of semiconducting and insulating molecules. This oligomer concept might stimulate a new molecular design of self-assembling semiconducting materials.

Authors with CRIS profile

Bastian Gothe Professur für Werkstoffwissenschaften (Polymerwerkstoffe) Johannes Will Lehrstuhl für Kristallographie und Strukturphysik (ICSP) Tobias Unruh Professur für Nanomaterialcharakterisierung (Streumethoden) Marcus Halik Professur für Werkstoffwissenschaften (Polymerwerkstoffe)

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials (EAM)

Involved external institutions

Universität Konstanz DE Germany (DE)

How to cite

APA:

Gothe, B., de Roo, T., Will, J., Unruh, T., Mecking, S., & Halik, M. (2017). Self-Assembled Monolayer Field-Effect Transistors based on Oligo-9,9’-dioctylfluorene Phosphonic Acids. Nanoscale, 9(47), 18584-18589. https://doi.org/10.1039/c7nr06090d

MLA:

Gothe, Bastian, et al. "Self-Assembled Monolayer Field-Effect Transistors based on Oligo-9,9’-dioctylfluorene Phosphonic Acids." Nanoscale 9.47 (2017): 18584-18589.

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