Enhancement of the critical current of intrinsic Josephson junctions by carrier injection
Kizilaslan O, Simsek Y, Aksam M, Koval Y, Müller P (2015)
Publication Language: English
Publication Status: Published
Publication Type: Journal article, Original article
Publication year: 2015
Journal
Publisher: Institute of Physics Publishing
Book Volume: 28
Article Number: 085017
Journal Issue: 8
DOI: 10.1088/0953-2048/28/8/085017
Abstract
We present a study of the doping effect by carrier injection of high-Tc superconducting Bi-based whiskers. The current was injected in the c-axis direction, i.e., perpendicular to the superconducting planes. Superconducting properties were investigated systematically as a function of the doping level. The doping level of one and the same sample was changed by current injection in very small steps from an underdoped state up to a slightly overdoped state. We have observed that Tc versus log (jc) exhibits a dome-shaped characteristic, which can be fitted by a parabola. As Tc versus carrier concentration has a parabolic form, too, it can be concluded that the critical current density jc increases exponentially with the doping level. The electron-trapping mechanism is interpreted in the framework of Phillips' microscopic theory. In addition, the Joule heating effect in the intrinsic Josephson junction (IJJ) was controlled by carrier injection, and the effect of the non-equilibrium quasiparticle on the I-V curves of the IJJs was also discussed.
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How to cite
APA:
Kizilaslan, O., Simsek, Y., Aksam, M., Koval, Y., & Müller, P. (2015). Enhancement of the critical current of intrinsic Josephson junctions by carrier injection. Superconductor Science and Technology, 28(8). https://doi.org/10.1088/0953-2048/28/8/085017
MLA:
Kizilaslan, O., et al. "Enhancement of the critical current of intrinsic Josephson junctions by carrier injection." Superconductor Science and Technology 28.8 (2015).
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