Ley L, Hundhausen M (1987)
Publication Type: Book chapter / Article in edited volumes
Publication year: 1987
Publisher: Plenum Press
Edited Volumes: Disordered semiconductors
City/Town: New York & London
Pages Range: n/a
ISBN: 0306424940
Research activities on nipi structures are reported, along with conductivity measurements as a function of layer thickness. The salient features of these measurements are discussed. The authors consider the kinetics of photocarrier recombination in nipi samples below 20 K, as well as persistent photoconductivity.
APA:
Ley, L., & Hundhausen, M. (1987). Carrier recombination kinetics in amorphous doping superlattices. In Disordered semiconductors. (pp. n/a). New York & London: Plenum Press.
MLA:
Ley, Lothar, and Martin Hundhausen. "Carrier recombination kinetics in amorphous doping superlattices." Disordered semiconductors. New York & London: Plenum Press, 1987. n/a.
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