Planar Zero Bias Schottky Diode Detector Operating in the E- and W-Band

Hrobak M, Sterns M, Schramm M, Stein W, Schmidt LP (2013)

Publication Language: English

Publication Type: Conference contribution

Publication year: 2013

Edited Volumes: European Microwave Week 2013, EuMW 2013 - Conference Proceedings; EuMC 2013: 43rd European Microwave Conference

Pages Range: 179-182

Conference Proceedings Title: Proceedings of the 43th European Microwave Week

Event location: Nuremberg, Germany

ISBN: 978-2-87487-031-6

Abstract

Schottky diode detectors are the method of choice for many scalar power measurement applications in the millimeter wave frequency range. Power monitoring of forward and backward travelling waves is especially important within signal generator frequency extension modules and front end modules of semiconductor automatic test systems (ATS). We present the synthesis and characterisation of a planar zero bias Schottky diode (ZBD) detector that covers an input frequency range of 60 GHz to 110 GHz. The planar design is based on thin-film processed Al2O3 substrate. The utilized gallium arsenide (GaAs) diodes are commercially available from Virginia Diodes, Inc. (VDI). The presented measurement data is compared to results from 3D electromagnetic field (EM) and nonlinear circuit simulations. © 2013 European Microwave Association.

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How to cite

APA:

Hrobak, M., Sterns, M., Schramm, M., Stein, W., & Schmidt, L.-P. (2013). Planar Zero Bias Schottky Diode Detector Operating in the E- and W-Band. In Proceedings of the 43th European Microwave Week (pp. 179-182). Nuremberg, Germany, DE.

MLA:

Hrobak, Michael, et al. "Planar Zero Bias Schottky Diode Detector Operating in the E- and W-Band." Proceedings of the 2013 43rd European Microwave Conference, EuMC 2013 - Held as Part of the 16th European Microwave Week, EuMW 2013, Nuremberg, Germany 2013. 179-182.

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