Planar Varistor Mode Schottky Diode Frequency Tripler Covering 60 GHz to 110 GHz

Hrobak M, Sterns M, Schramm M, Stein W, Schmidt LP (2013)

Publication Language: English

Publication Type: Conference contribution

Publication year: 2013

Journal

Publisher: Institute of Electrical and Electronics Engineers

Edited Volumes: IEEE MTT-S International Microwave Symposium Digest

Conference Proceedings Title: Proceedings of the International Microwave Symposium 2013

Event location: Seattle, USA

DOI: 10.1109/MWSYM.2013.6697410

Abstract

Frequency extender modules of vector network analyzers (VNA) and signal generators, as well as front end modules of semiconductor automatic testsystems (ATS) make use of broadband resistive diode frequency multipliers. We present the design and construction of a planar varistor tripler utilizing commercial gallium arsenide (GaAs) Schottky diodes on thin-film processed alumina (Al 2O3) substrate. Synthesis is based on a co-simulation procedure between 3D electromagnetic field (EM) and nonlinear circuit simulations. Measurement data over the focused output frequency range from 60 GHz to 110 GHz is presented. © 2013 IEEE.

Authors with CRIS profile

Involved external institutions

Rohde & Schwarz GmbH & Co. KG Germany (DE)

How to cite

APA:

Hrobak, M., Sterns, M., Schramm, M., Stein, W., & Schmidt, L.-P. (2013). Planar Varistor Mode Schottky Diode Frequency Tripler Covering 60 GHz to 110 GHz. In Proceedings of the International Microwave Symposium 2013. Seattle, USA: Institute of Electrical and Electronics Engineers.

MLA:

Hrobak, Michael, et al. "Planar Varistor Mode Schottky Diode Frequency Tripler Covering 60 GHz to 110 GHz." Proceedings of the 2013 IEEE MTT-S International Microwave Symposium Digest, MTT 2013, Seattle, USA Institute of Electrical and Electronics Engineers, 2013.

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