Hock R (2006)
Publication Status: Published
Publication Type: Journal article
Publication year: 2006
Publisher: BLACKWELL PUBLISHING
Book Volume: 39
Pages Range: 17-23
DOI: 10.1107/S002188980503298X
SiC crystals grown by the physical vapour transport process along the [001] direction show a curvature of the crystal growth front in correspondence with the shape of the isotherms. A large radius for the curvature of the isotherms enhances the formation of an extended facet. Under the facet, the lattice planes are flat with a high crystal quality as expressed by rocking-curve half widths of 0.022 degrees. In the non-faceted region, the lattice planes become bent, following the shape of the isotherms with a radius of typically 0.5 to 0.8 m and an increased rocking-curve half width of 0.3 degrees. A reduction of the growth rate from 300 mu m h(-1) to 70 mu m h(-1) does not affect this behaviour significantly. The lattice-plane curvature and the development of the facet are predominantly affected by the shape of the isotherms. For crystals grown in the [015] direction, the lattice planes adjust only in a one-dimensional manner to the isotherms. In all cases, the lattice-plane curvature results from the formation of a high density of small-angle grain boundaries. They are generated by the condensation of dislocations with Burgers vectors in the ab plane.
APA:
Hock, R. (2006). Lattice-plane curvature and small-angle grain boundaries in SiC bulk crystals. Journal of Applied Crystallography, 39, 17-23. https://doi.org/10.1107/S002188980503298X
MLA:
Hock, Rainer. "Lattice-plane curvature and small-angle grain boundaries in SiC bulk crystals." Journal of Applied Crystallography 39 (2006): 17-23.
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