Electronic Properties of Si-Hx Vibrational Modes at Si Waveguide Interface.

Bashouti MY, Yousefi P, Ristein J, Christiansen SH (2015)


Publication Status: Published

Publication Type: Journal article

Publication year: 2015

Journal

Book Volume: 6

Pages Range: 3988-93

Journal Issue: 19

DOI: 10.1021/acs.jpclett.5b01918

Abstract

Attenuated total reflectance (ATR) and X-ray photoelectron spectroscopy in suite with Kelvin probe were conjugated to explore the electronic properties of Si-Hx vibrational modes by developing Si waveguide with large dynamic detection range compared with conventional IR. The Si 2p emission and work-function related to the formation and elimination of Si-Hx bonds at Si surfaces are monitored based on the detection of vibrational mode frequencies. A transition between various Si-Hx bonds and thus related vibrational modes is monitored for which effective momentum transfer could be demonstrated. The combination of the aforementioned methods provides for results that permit a model for the kinetics of hydrogen termination of Si surfaces with time and advanced surface characterizing of hybrid-terminated semiconducting solids.

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How to cite

APA:

Bashouti, M.Y., Yousefi, P., Ristein, J., & Christiansen, S.H. (2015). Electronic Properties of Si-Hx Vibrational Modes at Si Waveguide Interface. Journal of Physical Chemistry Letters, 6(19), 3988-93. https://dx.doi.org/10.1021/acs.jpclett.5b01918

MLA:

Bashouti, Muhammad Y., et al. "Electronic Properties of Si-Hx Vibrational Modes at Si Waveguide Interface." Journal of Physical Chemistry Letters 6.19 (2015): 3988-93.

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