Conduction Mechanisms and Environmental Sensitivity of Solution-Processed Silicon Nanoparticle Layers for Thin-Film Transistors

Weis S, Körmer R, Jank M, Lemberger M, Otto M, Ryssel H, Peukert W, Frey L (2011)

Publication Type: Journal article

Publication year: 2011

Journal

Small Wiley-VCH Verlag

Publisher: Wiley-VCH Verlag

Book Volume: 7

Pages Range: 2853-2857

Journal Issue: 20

DOI: 10.1002/smll.201100703

Abstract

Room-temperature, solution-processed, silicon nanoparticle thin films show significant gating with distinct hysteresis in their current–voltage characteristics. Device performance strongly depends on measurement environment and charge transport is determined by particle surfaces. Particle encapsulation with polymethyl methacrylate or Al2O3 reduces hysteresis and device sensitivity against environmental influences. Both Al2O3 coating and UV exposure during measurements alter current transport and enhance conductivity, providing evidence for surface-dominated transport.

Authors with CRIS profile

Sebastian Weis Lehrstuhl für Elektronische Bauelemente Michael Jank Lehrstuhl für Elektronische Bauelemente Heiner Ryssel Technische Fakultät Wolfgang Peukert Lehrstuhl für Partikelsynthese (LFG) Lothar Frey Lehrstuhl für Elektronische Bauelemente

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials (EAM)

How to cite

APA:

Weis, S., Körmer, R., Jank, M., Lemberger, M., Otto, M., Ryssel, H.,... Frey, L. (2011). Conduction Mechanisms and Environmental Sensitivity of Solution-Processed Silicon Nanoparticle Layers for Thin-Film Transistors. Small, 7(20), 2853-2857. https://doi.org/10.1002/smll.201100703

MLA:

Weis, Sebastian, et al. "Conduction Mechanisms and Environmental Sensitivity of Solution-Processed Silicon Nanoparticle Layers for Thin-Film Transistors." Small 7.20 (2011): 2853-2857.

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