Hundhausen M (1994)
Publication Type: Journal article
Publication year: 1994
Publisher: Japan Society of Applied Physics
Book Volume: 33
Pages Range: L1809
In this paper we have determined the lifetime of photogenerated carriers in semiconductors using a technique that does not require time or frequency resolved measurements of the photoconductivity. The lifetime is deduced from the DC-short circuit current that is induced by a laser interference grating of period Λ moving along the semiconductor surface with the velocity v
APA:
Hundhausen, M. (1994). Determination of the Photocarrier Lifetime in Amorphous Silicon with the Moving Photocarrier Grating Technique. Japanese Journal of Applied Physics, 33, L1809.
MLA:
Hundhausen, Martin. "Determination of the Photocarrier Lifetime in Amorphous Silicon with the Moving Photocarrier Grating Technique." Japanese Journal of Applied Physics 33 (1994): L1809.
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