Monolithic circuits with epitaxial graphene/silicon carbide transistors

Hertel S, Krieger M, Weber HB (2014)

Publication Type: Journal article

Publication year: 2014

Journal

Physica Status Solidi Akademie Verlag

Publisher: Akademie Verlag

Book Volume: 8

Pages Range: 688-691

Journal Issue: 8

DOI: 10.1002/pssr.201409171

Abstract

A concept is presented that uses epitaxial graphene on silicon carbide (SiC) for digital circuits. It uses graphene as a metal and the underlying substrate SiC as semiconductor. On the base of transistors with excellent switching behavior, Inverter and NAND operation is demonstrated. (© 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim) A concept is presented that uses epitaxial graphene on silicon carbide (SiC) for digital circuits. It uses graphene as a metal and the underlying substrate SiC as semiconductor. On the base of transistors with excellent switching behavior, Inverter and NAND operation is demonstrated. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Authors with CRIS profile

Stefan Hertel Chair of Applied Physics (LAP) Michael Krieger Chair of Applied Physics (LAP) Heiko Weber Chair of Applied Physics (LAP)

Related research project(s)

Monolithic electronic circuits based on epitaxial graphene Dec. 1, 2013 - Dec. 1, 2016

How to cite

APA:

Hertel, S., Krieger, M., & Weber, H.B. (2014). Monolithic circuits with epitaxial graphene/silicon carbide transistors. Physica Status Solidi, 8(8), 688-691. https://doi.org/10.1002/pssr.201409171

MLA:

Hertel, Stefan, Michael Krieger, and Heiko B. Weber. "Monolithic circuits with epitaxial graphene/silicon carbide transistors." Physica Status Solidi 8.8 (2014): 688-691.

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