Field enhanced conductivity in a-Si:H thin film transistors

Hundhausen M, Ley L (1993)

Publication Type: Journal article

Publication year: 1993


Publisher: Elsevier

Book Volume: 164-166

Pages Range: 529

DOI: 10.1016/0022-3093(93)90606-X


We have used amorphous silicon thin film transistors (TFT) to study the excitation and the distribution of electrons in the band tail states in the presence of strong electric fields at low temperature. The dark conductivity shows the same features as field enhanced conductivity (FEC) in doped a-Si:H, albeit at much smaller fields. The magnitude of the IR-photoconductivity measured between 120 and 260 meV is independent of gate or source-drain voltage as long as the source-drain current is kept constant. We consider a model in which electrons are excited by the field from the Fermi energy (EF) to an energy higher up in the band tail. The IR-photocurrent spectra reflect then the carrier distribution that results from the thermalization of electrons back to EF. © 1993.

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Hundhausen, M., & Ley, L. (1993). Field enhanced conductivity in a-Si:H thin film transistors. Journal of Non-Crystalline Solids, 164-166, 529.


Hundhausen, Martin, and Lothar Ley. "Field enhanced conductivity in a-Si:H thin film transistors." Journal of Non-Crystalline Solids 164-166 (1993): 529.

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