Current annealing and electrical breakdown of epitaxial graphene

Hertel S, Kißlinger F, Jobst J, Waldmann D, Krieger M, Weber HB (2011)

Publication Type: Journal article, Letter

Publication year: 2011

Journal

Applied Physics Letters American Institute of Physics (AIP)

Publisher: American Institute of Physics (AIP)

Book Volume: 98

Pages Range: 212109

DOI: 10.1063/1.3592841

Abstract

We report on epitaxial graphene on silicon carbide at high current densities. We observe two distinguished regimes, and a final breakdown. First for low current densities the conductance is enhanced due to desorption of adsorbates. Second with increasing bias the sample locally starts to glow and is strongly heated. The silicon carbide material decomposes, graphitic material is formed and thus additional current paths are created. The graphene layer breaks down, which is, however, not visible in high bias data. The final breakdown is a self-amplifying process resulting in a locally destroyed sample but surprisingly with better conductance than the original sample. © 2011 American Institute of Physics.

Authors with CRIS profile

Stefan Hertel Chair of Applied Physics (LAP) Ferdinand Kißlinger Chair of Applied Physics (LAP) Johannes Jobst Chair of Applied Physics (LAP) Daniel Waldmann Chair of Applied Physics (LAP) Michael Krieger Chair of Applied Physics (LAP) Heiko Weber Chair of Applied Physics (LAP)

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials (EAM)

How to cite

APA:

Hertel, S., Kißlinger, F., Jobst, J., Waldmann, D., Krieger, M., & Weber, H.B. (2011). Current annealing and electrical breakdown of epitaxial graphene. Applied Physics Letters, 98, 212109. https://doi.org/10.1063/1.3592841

MLA:

Hertel, Stefan, et al. "Current annealing and electrical breakdown of epitaxial graphene." Applied Physics Letters 98 (2011): 212109.

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