Magnetoresistance of multiple electron gas wires at the AlGaAs/GaAs heterointerface

Hundhausen M (1988)

Publication Type: Journal article

Publication year: 1988

Journal

Applied Physics Letters American Institute of Physics (AIP)

Publisher: American Institute of Physics (AIP)

Book Volume: 53

Pages Range: 110

DOI: 10.1063/1.100384

Abstract

A parallel arrangement of thin wires has been fabricated in the Al xGa1-xAs/GaAs heterostructure with holographic lithography. The observed anisotropy of the conductivity parallel versus perpendicular to the wires proves the existence of isolated conduction paths. Transverse magnetoresistance is negative at 4 K and exhibits a shoulder at a magnetic field, where the diameter of the cyclotron orbit amounts to 90 nm, which is supposed to be the effective wire width.

Authors with CRIS profile

Martin Hundhausen Lehrstuhl für Laserphysik

How to cite

APA:

Hundhausen, M. (1988). Magnetoresistance of multiple electron gas wires at the AlGaAs/GaAs heterointerface. Applied Physics Letters, 53, 110. https://doi.org/10.1063/1.100384

MLA:

Hundhausen, Martin. "Magnetoresistance of multiple electron gas wires at the AlGaAs/GaAs heterointerface." Applied Physics Letters 53 (1988): 110.

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