Carrier Recombination Times in Amorphous-Silicon Doping Superlattices

Hundhausen M, Ley L (1984)

Publication Type: Journal article

Publication year: 1984


Publisher: American Physical Society

Book Volume: 53

Pages Range: 1598

DOI: 10.1103/PhysRevLett.53.1598


Doping superlattices, i.e., multilayer structures consisting of ultrathin (50 <~d<~400 ) n-type, intrinsic, and p-type layers of a-Si: H (nipi structures), have been produced. Up to a tenfold increase in their infrared photoconductivity after band-gap illumination compared to unstructured a-Si: H is observed. The results are well described by a simple model for the carrier recombination kinetics that takes into account the spatial separation of electrons and holes due to the modulation of the band energies. © 1984 The American Physical Society.

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How to cite


Hundhausen, M., & Ley, L. (1984). Carrier Recombination Times in Amorphous-Silicon Doping Superlattices. Physical Review Letters, 53, 1598.


Hundhausen, Martin, and Lothar Ley. "Carrier Recombination Times in Amorphous-Silicon Doping Superlattices." Physical Review Letters 53 (1984): 1598.

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