Transport properties of high-quality epitaxial graphene on 6H-SiC(0001)

Jobst J, Waldmann D, Speck F, Hirner R, Maude D, Seyller T, Weber HB (2011)

Publication Status: Published

Publication Type: Journal article, Letter

Publication year: 2011


Publisher: Elsevier

Book Volume: 151

Pages Range: 1061-1064

Journal Issue: 16

DOI: 10.1016/j.ssc.2011.05.015


We have extensively studied the electronic properties of epitaxial graphene grown on the Si face of a 6H silicon carbide substrate by thermal decomposition in an argon atmosphere. Using e-beam lithography, large van der Pauw structures as well as Hall bars were patterned. Their size ranged from millimeters down to submicrometer-sized Hall bars, the latter entirely placed on atomically flat substrate terraces. We found reproducible electronic properties, independent of the sample size and orientation, over a broad temperature range. A comparison of the mobility values indicated no enhanced scattering at the macroscopic step edges of the SiC substrate and due to adsorbed molecules. However, the strong coupling to the substrate results in an elevated charge carrier density n and a reduced mobility mu compared to exfoliated graphene. If n is decreased the mobility rises substantially (up to 29 000 cm(2)/V s at 25 K), and Shubnikov-de Haas oscillations and the graphene-like quantum Hall effect become visible. This leads to the conclusion that the electrons in epitaxial graphene have the same quasi-relativistic properties previously shown in exfoliated graphene and expected from theory. (C) 2011 Elsevier Ltd. All rights reserved.

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Jobst, J., Waldmann, D., Speck, F., Hirner, R., Maude, D., Seyller, T., & Weber, H.B. (2011). Transport properties of high-quality epitaxial graphene on 6H-SiC(0001). Solid State Communications, 151(16), 1061-1064.


Jobst, Johannes, et al. "Transport properties of high-quality epitaxial graphene on 6H-SiC(0001)." Solid State Communications 151.16 (2011): 1061-1064.

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