High gain operational amplifier implemented in 0.5 μm GaAs E/D HEMT technology

Seitzer D, Feng S (1994)

Publication Status: Published

Publication Type: Journal article

Publication year: 1994

Journal

Electronics Letters Institution of Engineering and Technology (IET)

Publisher: Institution of Engineering and Technology (IET)

Book Volume: 30

Pages Range: 636-637

DOI: 10.1049/el:19940467

Abstract

A high voltage gain operational amplifier implemented in 0.5 mum GaAs E/D HEMT technology is presented. The amplifier principally consists of a differential input stage and a high gain cascode stage which was developed by Toumazou and Haigh [1]. On-wafer measurement verifies that the amplifier achieves an open-loop voltage gain of 73 dB and a unity-gain bandwidth of 1.78 GHz.

Authors with CRIS profile

Dieter Seitzer Lehrstuhl für Technische Elektronik (LTE)

Involved external institutions

Fraunhofer-Institut für Integrierte Schaltungen (IIS) DE Germany (DE)

How to cite

APA:

Seitzer, D., & Feng, S. (1994). High gain operational amplifier implemented in 0.5 μm GaAs E/D HEMT technology. Electronics Letters, 30, 636-637. https://doi.org/10.1049/el:19940467

MLA:

Seitzer, Dieter, and Shen Feng. "High gain operational amplifier implemented in 0.5 μm GaAs E/D HEMT technology." Electronics Letters 30 (1994): 636-637.

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