Preu S, Regensburger S, Kim S, Mittendorff M, Winnerl S, Malzer S, Lu H, Burke P, Gossard A, Weber HB, Sherwin MS (2013)
Publication Type: Conference contribution, Conference Contribution
Publication year: 2013
Original Authors: Preu S., Regensburger S., Kim S., Mittendorff M., Winnerl S., Malzer S., Lu H., Burke P.G., Gossard A.C., Weber H.B., Sherwin M.S.
Publisher: International Society for Optical Engineering; 1999
Book Volume: 8900
Article Number: 89000R
DOI: 10.1117/12.2029478
We report on Terahertz (THz) detectors based on III-V high-electron- mobility field-effect transistors (FET). The detection results from a rectification process that is still highly efficient far above frequencies where the transistor provides gain. Several detector layouts have been optimized for specific applications at room temperature: we show a broadband detector layout, where the rectifying FET is coupled to a broadband logarithmic-periodic antenna. Another layout is optimized for mixing of two orthogonal THz beams at 370 GHz or, alternatively, 570 GHz. A third version uses a large array of FETs with very low access resistance allowing for detection of very short high-power THz pulses. We reached a time resolution of 20 ps. © 2013 SPIE.
APA:
Preu, S., Regensburger, S., Kim, S., Mittendorff, M., Winnerl, S., Malzer, S.,... Sherwin, M.S. (2013). Broadband THz detection and homodyne mixing using GaAs highelectron- Mobility transistor rectifiers. In Proceedings of the 6th International Conference on Millimetre Wave and Terahertz Sensors and Technology. Dresden, DE: International Society for Optical Engineering; 1999.
MLA:
Preu, Sascha, et al. "Broadband THz detection and homodyne mixing using GaAs highelectron- Mobility transistor rectifiers." Proceedings of the 6th International Conference on Millimetre Wave and Terahertz Sensors and Technology, Dresden International Society for Optical Engineering; 1999, 2013.
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