Starke U, Weiss W, Rangelov G, Fauster T, Heinz K (1996)
Publication Status: Published
Publication Type: Journal article
Publication year: 1996
Publisher: Elsevier
Book Volume: 352
Pages Range: 89-93
DOI: 10.1016/0039-6028(95)01096-3
A CoSi2(100) film of 12 Angstrom thickness was grown on Si(100) and investigated by low-energy electron diffraction (LEED). Two surface phases of the film can be prepared depending on the annealing temperature. The c(2 X 2) phase appearing first (350 degrees C) was compared to the c(2 X 2) structure of a bulk CoSi2(100) sample. Diffraction spot intensities are very similar for bulk and film samples. By a quantitative LEED analysis both surfaces are found to be arranged in a CaF2 structure terminated by its silicon layer. Additional Si adatoms in fourfold hollow sites form the c(2 X 2) periodicity. The second phase (600 degrees C) has a (2 root 2 X root 2)-R45 degrees periodicity. Here, the film is cracked and mixed with patches of clean (2 X 1)-Si(100), thus making the LEED pattern similar to a c(4 X 4) structure.
APA:
Starke, U., Weiss, W., Rangelov, G., Fauster, T., & Heinz, K. (1996). CoSi2 on Si(100): LEED investigations of the c(2x2) and (2 root 2x root 2) phases and comparison to a bulk crystal CoSi2(100) surface. Surface Science, 352, 89-93. https://doi.org/10.1016/0039-6028(95)01096-3
MLA:
Starke, Ulrich, et al. "CoSi2 on Si(100): LEED investigations of the c(2x2) and (2 root 2x root 2) phases and comparison to a bulk crystal CoSi2(100) surface." Surface Science 352 (1996): 89-93.
BibTeX: Download