Defect generation and annihilation in 3C-SiC-(001) homoepitaxial growth by sublimation
Hens P, Müller J, Wagner G, Liljedahl R, Spiecker E, Syväjärvi M (2013)
Publication Language: English
Publication Status: Published
Publication Type: Authored book, Volume of book series
Publication year: 2013
Pages Range: 283-286
Event location: St. Petersburg
ISBN: 9783037856246
DOI: 10.4028/www.scientific.net/MSF.740-742.283
Abstract
In this paper we present an investigation on the defect generation and annihilation during the homoepitaxial growth step of cubic silicon carbide by sublimation epitaxy on templates grown by chemical vapor deposition on silicon substrates. Several structural defects like stacking faults, twins and star-defects show opposite evolution from the template layer into the sublimation grown material. While single planar defects tend to annihilate with increasing layer thickness, the defect clusters assigned to the star-defects are enlarging. These issues contribute to a balance of how to achieve the best possible quality on thick layers. © (2013) Trans Tech Publications, Switzerland.
Authors with CRIS profile
Julian Müller
Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)
Erdmann Spiecker
Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)
Additional Organisation(s)
Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)
Interdisziplinäres Zentrum, Center for Nanoanalysis and Electron Microscopy (CENEM)
Involved external institutions
Sweden (SE)How to cite
APA:
Hens, P., Müller, J., Wagner, G., Liljedahl, R., Spiecker, E., & Syväjärvi, M. (2013). Defect generation and annihilation in 3C-SiC-(001) homoepitaxial growth by sublimation.
MLA:
Hens, Philip, et al. Defect generation and annihilation in 3C-SiC-(001) homoepitaxial growth by sublimation. 2013.
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