A 1.8-mW Low Power, PVT-Resilient, High Linearity, modified Gilbert-Cell Down-Conversion Mixer in 28-nm CMOS

Ciocoveanu R, Rimmelspacher J, Weigel R, Hagelauer AM, Issakov V (2018)

Publication Language: English

Publication Status: Accepted

Publication Type: Conference contribution, Conference Contribution

Future Publication Type: Conference contribution

Publication year: 2018

Pages Range: 19-22

Event location: Anaheim, USA

DOI: 10.1109/SIRF.2018.8304218

Abstract

This paper presents a high linearity modified Gilbert-cell mixer designed for 60-GHz applications and fabricated in a 28-nm CMOS technology. To increase the linearity of the mixer, the RF transconductance stage was removed, thereby reducing the amount of stacked transistors. We propose using a self-biasing Vth reference in the bias network to make the mixer more robust to process-voltagetemperature (PVT) variations. Measurement results show that this mixer achieves a voltage conversion gain of 4.7 dB, a 1-dB compression point of -3 dBm and a 12.3 dB noise figure, while it draws only 2 mA from a single 0.9 V supply. The occupied area on the chip is 0.35x0.68 mm2 including pads.

Authors with CRIS profile

Radu Ciocoveanu Lehrstuhl für Technische Elektronik (LTE) Johannes Rimmelspacher Lehrstuhl für Technische Elektronik (LTE) Robert Weigel Lehrstuhl für Technische Elektronik (LTE) Amelie Marietta Hagelauer Lehrstuhl für Technische Elektronik (LTE)

Involved external institutions

Infineon Technologies AG

Germany (DE)

How to cite

APA:

Ciocoveanu, R., Rimmelspacher, J., Weigel, R., Hagelauer, A.M., & Issakov, V. (2018). A 1.8-mW Low Power, PVT-Resilient, High Linearity, modified Gilbert-Cell Down-Conversion Mixer in 28-nm CMOS. In Proceedings of the Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (pp. 19-22). Anaheim, USA.

MLA:

Ciocoveanu, Radu, et al. "A 1.8-mW Low Power, PVT-Resilient, High Linearity, modified Gilbert-Cell Down-Conversion Mixer in 28-nm CMOS." Proceedings of the Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Anaheim, USA 2018. 19-22.

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