Surface transfer doping of diamond by fullerene

Ristein J, Ley L (2005)

Publication Type: Journal article

Publication year: 2005


Publisher: Elsevier

Book Volume: 14

Pages Range: 451

DOI: 10.1016/j.diamond.2004.12.051


Fifteen years after Landstrass and Ravi [1] [I.M. Landstrass, K.V. Ravi, App. Phys. Lett, 55 (1989) 975] reported a hydrogen induced surface conductivity of diamond, it has now been established that the phenomenon is based on a sub-surface hole accumulation layer. A quantitative model for the origin of this layer has been proposed by our group earlier and is based on the charge exchange between the diamond surface and solvated ions in a water layer that forms spontaneously on all surfaces in air. The process relies on the particularly low ionization energy of the hydrogenated diamond surface [2] [F. Maier, M. Riedel, B. Mantel, J. Ristein, and L. Ley, Phys. Rev. Lett. 85 (2000) 3472]. Here, we report on fullerenes (C60) and fluorinated fullerenes (C60F48) as alternative adsorbate systems. They induce surface conductivity on a level comparable (C60) or even higher (C60F48) than that observed under atmospheric conditions. Whereas in the case of C60 efficient doping requires the formation of the van-der Waals solid on top of the surface of diamond, C60F 48 acts as surface acceptor even as isolated molecule. In both cases, the doping efficiency can be modeled by considering the electrochemical equilibrium between the diamond and the adsorbate layer. © 2005 Elsevier B.V. All rights reserved.

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Ristein, J., & Ley, L. (2005). Surface transfer doping of diamond by fullerene. Diamond and Related Materials, 14, 451.


Ristein, Jürgen, and Lothar Ley. "Surface transfer doping of diamond by fullerene." Diamond and Related Materials 14 (2005): 451.

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