Ristein J, Ley L (2004)
Publication Type: Journal article
Publication year: 2004
Publisher: Nature Publishing Group
Book Volume: 430
Pages Range: 439
DOI: 10.1038/nature02751
The electronic properties of many materials can be controlled by introducing appropriate impurities into the bulk crystal lattice in a process known as doping. In this way, diamond (a well-known insulator) can be transformed into a semiconductor, and recent progress in thin-film diamond synthesis has sparked interest in the potential applications of semiconducting diamond. However, the high dopant activation energies (in excess of 0.36 eV) and the limitation of donor incorporation to (111) growth facets only have hampered the development of diamond-based devices. Here we report a doping mechanism for diamond, using a method that does not require the introduction of foreign atoms into the diamond lattice. Instead, C
APA:
Ristein, J., & Ley, L. (2004). Surface transfer doping of diamond. Nature, 430, 439. https://doi.org/10.1038/nature02751
MLA:
Ristein, Jürgen, and Lothar Ley. "Surface transfer doping of diamond." Nature 430 (2004): 439.
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