Surface electronic properties of diamond

Ristein J, Maier F, Ley L (2000)

Publication Type: Journal article

Publication year: 2000


Publisher: John Wiley & Sons, Ltd / Academic Verlag GMBH

Book Volume: 181

Pages Range: 65

DOI: 10.1002/1521-396X(200009)181:1<65::AID-PSSA65>3.0.CO;2-Z


The influence of surface states, defects and adsorbates on the electronic properties of diamond surfaces are discussed. As far as surface states and reconstructions are concerned the principal crystallographic surfaces, (100), (111) and (110), are essentially understood in their adsorbate free form and also when terminated by hydrogen. The role of surface defects is addressed and the correlation between the position of the surface Fermi level and the concentration of surface defects is discussed quantitatively for p-type diamond. Hydrogen passivation leads to a negative electron affinity of diamond surfaces due to a dipole layer which is induced by the heteropolar carbon-hydrogen bonds of the surface atoms. This aspect is discussed quantitatively. Finally, an experiment in which photoelectron spectroscopy and in situ conductivity measurements were combined to elucidate the surface conductivity of diamond is described and analyzed.

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Ristein, J., Maier, F., & Ley, L. (2000). Surface electronic properties of diamond. physica status solidi (a), 181, 65.<65::AID-PSSA65>3.0.CO;2-Z


Ristein, Jürgen, Florian Maier, and Lothar Ley. "Surface electronic properties of diamond." physica status solidi (a) 181 (2000): 65.

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