Defect Spectroscopy and Determination of the Electron Diffusion Length in Single Crystal Diamond by Total Photoelectron Yield Spectroscopy

Ristein J, Ley L (1997)

Publication Type: Journal article

Publication year: 1997

Journal

Physical Review Letters American Physical Society

Publisher: American Physical Society

Book Volume: 78

Pages Range: 1803-1806

Journal Issue: 9

Abstract

Novel photoelectron yield experiments performed with a dynamical range of 8 orders of magnitude reveal a new excitation channel for electron emission on diamond (100) and (111) surfaces with negative electron affinity which is due to defect states 2.0 and 4.1 eV below the conduction hand minimum. Analyzing the competition of free conduction band electrons excited out of defects and excitons with respect to final photoelectron production we determine that the electron diffusion length in p-type IIb diamond is between 150 and 250 μm.

Authors with CRIS profile

Jürgen Ristein Lehrstuhl für Laserphysik Lothar Ley Naturwissenschaftliche Fakultät

How to cite

APA:

Ristein, J., & Ley, L. (1997). Defect Spectroscopy and Determination of the Electron Diffusion Length in Single Crystal Diamond by Total Photoelectron Yield Spectroscopy. Physical Review Letters, 78(9), 1803-1806.

MLA:

Ristein, Jürgen, and Lothar Ley. "Defect Spectroscopy and Determination of the Electron Diffusion Length in Single Crystal Diamond by Total Photoelectron Yield Spectroscopy." Physical Review Letters 78.9 (1997): 1803-1806.

BibTeX: Download