Ristein J, Ley L (1996)
Publication Type: Journal article
Publication year: 1996
Publisher: American Institute of Physics (AIP)
Book Volume: 68
Pages Range: 1247
DOI: 10.1063/1.115941
Core and valence band photoemission data of hydrogen passivated Si(111):H surfaces yield surface Fermi level positions that are indicative of a near-surface depletion layer for n- as well as p-type samples. The bulk Fermi level positions are attained after annealing at ∼400°C. These observations are explained in terms of a hydrogen induced passivation of donors and acceptors in a surface layer of the order of a μm as a result of the wet-chemical etching procedure. © 1996 American Institute of Physics.
APA:
Ristein, J., & Ley, L. (1996). Surface Fermi level position of hydrogen passivated Si (111) surfaces. Applied Physics Letters, 68, 1247. https://doi.org/10.1063/1.115941
MLA:
Ristein, Jürgen, and Lothar Ley. "Surface Fermi level position of hydrogen passivated Si (111) surfaces." Applied Physics Letters 68 (1996): 1247.
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