Electronic and structural properties of the a-Si:H/a-SiNx:H interface

Ristein J, Ley L (1993)

Publication Type: Journal article

Publication year: 1993

Journal

Journal of Non-Crystalline Solids Elsevier

Publisher: Elsevier

Book Volume: 164-166

Pages Range: 195

DOI: 10.1016/0022-3093(93)91125-M

Abstract

Valence band offsets and band bending were systematically investigated by photoelectron spectroscopy for the a-Si:H/a-SiNX:H heterojunction covering nitrogen concentrations between 0≤×≤1.63. The chemical structure and the defect density of the interfaces are determined. © 1993.

Authors with CRIS profile

Jürgen Ristein Lehrstuhl für Laserphysik Lothar Ley Naturwissenschaftliche Fakultät

How to cite

APA:

Ristein, J., & Ley, L. (1993). Electronic and structural properties of the a-Si:H/a-SiNx:H interface. Journal of Non-Crystalline Solids, 164-166, 195. https://doi.org/10.1016/0022-3093(93)91125-M

MLA:

Ristein, Jürgen, and Lothar Ley. "Electronic and structural properties of the a-Si:H/a-SiNx:H interface." Journal of Non-Crystalline Solids 164-166 (1993): 195.

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