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Unification of geminate and distant pair recombination statistics: low temperature photoelectronic properties in a-Si:H

Ristein J (1991)

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Publication Type: Journal article

Publication year: 1991

Journal

Publisher: Elsevier

Book Volume: 137&138

Pages Range: 563

DOI: 10.1016/S0022-3093(05)80180-2

Abstract

On the basis of seperately existing theories the combined influence of geminate, non geminate and defect recombination on the low temperature photoinduced properties of a-Si:H is discussed. © 1991 Elsevier Science Publishers B.V. All rights reserved.

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How to cite

APA:

Ristein, J. (1991). Unification of geminate and distant pair recombination statistics: low temperature photoelectronic properties in a-Si:H. Journal of Non-Crystalline Solids, 137&138, 563. https://doi.org/10.1016/S0022-3093(05)80180-2

MLA:

Ristein, Jürgen. "Unification of geminate and distant pair recombination statistics: low temperature photoelectronic properties in a-Si:H." Journal of Non-Crystalline Solids 137&138 (1991): 563.

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