Quenching by electric fields of the luminescence of As2Se3 single crystals
Ristein J (1986)
Publication Type: Journal article
Publication year: 1986
Journal
Publisher: Elsevier
Book Volume: 57
Pages Range: 639
DOI: 10.1016/0038-1098(86)90340-6
Abstract
High electric fields reduce the luminescence of As2Se3 at 77 K and increase simultaneously the photoconductivity. Comparison of both effects points to excitons as the source for emission of light whereas free carriers contributing to photoconductance recombine non radiatively. The field affects free excitons and their thermalization but does not ionize excitons trapped in radiative centres. At low excitation energy, in the range of indirect transitions, the field quenching of luminescence obeys a Poole-Frenkel behaviour. Such interpretation yields an exciton binding energy of 50 meV. The quantum efficiency of luminescence decreases to higher photon energy. Part of this decrease is related to an increase of the photoconductivity. © 1986.
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How to cite
APA:
Ristein, J. (1986). Quenching by electric fields of the luminescence of As2Se3 single crystals. Solid State Communications, 57, 639. https://doi.org/10.1016/0038-1098(86)90340-6
MLA:
Ristein, Jürgen. "Quenching by electric fields of the luminescence of As2Se3 single crystals." Solid State Communications 57 (1986): 639.
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