Persistent Photoconductivity in Doping-modulated amorphous silicon superlattices

Hundhausen M, Ley L (1985)

Publication Type: Journal article

Publication year: 1985


Publisher: Elsevier

Book Volume: 77&78

Pages Range: 1051

DOI: 10.1016/0022-3093(85)90839-7


Doping superlattices prepared by depositing successively 105 Å thick layers of n-type, intrinsic, and p-type amorphous hydrogenated silicon, respectively (nipi structures), exhibit persistent photoconductivity (PPC) at room temperature. We prove that PPC is a bulk effect and that its creation is thermally activated with an activation energy of ∼0.4 eV; a slightly higher activation energy (∼0.7 eV) is necessary for the quenching of PPC. The thermal activation of PPC is incompatible with an explanation of this effect simply in terms of metastable carriers which are spatially separated in the space charge fields of the nipi structure. We propose instead that holes are trapped in acceptor-like centers, AX, in the p-regions of the sample whereas the balancing concentration of electrons, confined to the n-layers by the nipi fields and thus prevented from recombining with the holes, are responsible for PPC. The AX centers possess, in analogy to the DX centers in Ga1-xAlxAs, a strong electron-lattice coupling which accounts for the thermal activation energies of hole capture and ionization. © 1985.

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Hundhausen, M., & Ley, L. (1985). Persistent Photoconductivity in Doping-modulated amorphous silicon superlattices. Journal of Non-Crystalline Solids, 77&78, 1051.


Hundhausen, Martin, and Lothar Ley. "Persistent Photoconductivity in Doping-modulated amorphous silicon superlattices." Journal of Non-Crystalline Solids 77&78 (1985): 1051.

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