Malzer S (2005)
Publication Type: Conference contribution, Conference Contribution
Publication year: 2005
Original Authors: Renner F.H., Klar O., Malzer S., Driscoll D., Hanson M., Gossard A.C., Loata G., Loffler T., Roskos H., Dohler G.H.
Publisher: American Institute of Physics
Book Volume: 772
Pages Range: 1220-1221
Event location: Flagstaff, AZ
DOI: 10.1063/1.1994552
We report on a novel concept for THz-photomixers based on quasi-ballistic transport in an asymmetric nipnip-doping-superlattice. Due to tansport-optimized i-layers the emitted powers are not transit-time-limited up to 1 THz. Furthermore the capacitance and hence the RC-roll-off is minimized by increasing the number of pin-periods. The frequency-dependence of the nipnip-emitter proofs to be superior to corresponding pin-photomixers. © 2005 American Institute of Physics.
APA:
Malzer, S. (2005). The nipnip-THz-emitter: Photomixing based on ballistic transport. In Proceedings of the PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 (pp. 1220-1221). Flagstaff, AZ: American Institute of Physics.
MLA:
Malzer, Stefan. "The nipnip-THz-emitter: Photomixing based on ballistic transport." Proceedings of the PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27, Flagstaff, AZ American Institute of Physics, 2005. 1220-1221.
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