Khachadorian S, Gillen R, Thon-Tat C, Zhu LC, Maultzsch J, Phillips MR, Hoffmann A (2016)
Publication Status: Published
Publication Type: Journal article
Publication year: 2016
Publisher: WILEY-V C H VERLAG GMBH
Book Volume: 10
Pages Range: 334-338
Journal Issue: 4
Raman scattering experiments complemented by density functional theory (DFT) calculations of phonon frequencies have been performed to understand the origin of observed high-energy local Raman modes at 2269 cm(-1) and 2282 cm(-1) on N-plasma treated ZnO nanowires (NWs). We show that these modes increase in intensity with prolonged N-plasma treatment. Our results reveal that the origin of the high-energy Raman local mode is a loosely bound N-2 molecule in the vicinity of a zinc vacancy, which according to our latest work acts as a shallow acceptor and leads to the donor-acceptor-pair transition at 3.232 eV [Phys. Rev. B 92, 024103 (2015)]. Moreover the results provide a more thorough description of nitrogen related complexes in ZnO NWs. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
APA:
Khachadorian, S., Gillen, R., Thon-Tat, C., Zhu, L.C., Maultzsch, J., Phillips, M.R., & Hoffmann, A. (2016). Revealing the origin of high-energy Raman local mode in nitrogen doped ZnO nanowires. Physica Status Solidi-Rapid Research Letters, 10(4), 334-338. https://doi.org/10.1002/pssr.201510405
MLA:
Khachadorian, Sevak, et al. "Revealing the origin of high-energy Raman local mode in nitrogen doped ZnO nanowires." Physica Status Solidi-Rapid Research Letters 10.4 (2016): 334-338.
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