Hock R (2004)
Publication Status: Published
Publication Type: Journal article
Publication year: 2004
Publisher: R OLDENBOURG VERLAG
Book Volume: 219
Pages Range: 81-87
Journal Issue: 2
The eight-beam case of the Si-888 reflection in backscattering has been studied by scanning the eight simultaneously excited reflections Si 888, Si 088, Si 880, Si 808, Si 800, Si 080, Si 008 and Si 000 in wavelength and two independent rocking angles. Largely different widths of the individual reflection profiles found are explained from the Ewald representation as suggested by kinematic diffraction theory. The intensity profiles demonstrate a coupling of the eight simultaneously excited wave fields as expected from dynamic diffraction theory.
APA:
Hock, R. (2004). Intensity distribution of the eight-beam case of the Si-888 reflection in backscattering geometry. Zeitschrift für Kristallographie, 219(2), 81-87.
MLA:
Hock, Rainer. "Intensity distribution of the eight-beam case of the Si-888 reflection in backscattering geometry." Zeitschrift für Kristallographie 219.2 (2004): 81-87.
BibTeX: Download