Hock R (2006)
Publication Status: Published
Publication Type: Journal article
Publication year: 2006
Publisher: WILEY-V C H VERLAG GMBH
Book Volume: 203
Pages Range: 2581-2587
Journal Issue: 11
In this article we present results of a detailed study of selenization reactions in the quaternary system Cu-In-Al-Se and of the binary subsystem aluminum-selenium. The investigation of solid-state reactions involved in the formation of the compound semiconductor Cu(In,Al)Se-2 was performed using real-time X-ray diffraction (XRD) with a time resolution of 22.5 s while annealing an elemental layer stack of the metals covered with selenium. A temperature-resolved phase analysis shows that the formation of the semiconductor takes place via metal-selenides. Ex-situ XRD measurements of the processed thin films show a phase segregation concerning the aluminum content of the formed chalcopyrite. Subsequent Rietveld-refinement of real-time measurements reveals a formation reaction of the quaternary semiconductor Cu(In,AI)Se-2 from the gamma-In2Se3 related crystal structure of (Al,In)(2)Se-3 and Cu2Se as educts. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
APA:
Hock, R. (2006). Real-time investigations of selenization reactions in the system Cu-In-Al-Se. physica status solidi (a), 203(11), 2581-2587. https://doi.org/10.1002/pssa.200669558
MLA:
Hock, Rainer. "Real-time investigations of selenization reactions in the system Cu-In-Al-Se." physica status solidi (a) 203.11 (2006): 2581-2587.
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