Dynamics of strain relaxation studied by in situ x-ray diffraction immediately after layer heteroepitaxy

Horbaschk M, Benkert A, Schumacher C, Brunner K, Neder R (2009)

Publication Status: Published

Publication Type: Journal article

Publication year: 2009

Journal

Applied Physics Letters American Institute of Physics (AIP)

Publisher: AMER INST PHYSICS

Book Volume: 94

Journal Issue: 21

DOI: 10.1063/1.3143630

Abstract

The temporal development of strain relaxation is monitored during and immediately after heteroepitaxy by x-ray diffraction with high resolution in strain and time. ZnSe layers on (001)GaAs with thicknesses just a little above the onset of plastic relaxation reveal inhomogeneous, partial relaxation which continues with a time constant of 50 s immediately after the stop of layer growth. A model of generation, glide, and blocking of dislocations well explains the observation that the degree of relaxation finally reached after growth stop is determined by the density of dislocations rapidly generated prior to it.

Authors with CRIS profile

Reinhard Neder Professur für Allgemeine Mineralogie/Kristallographie

Involved external institutions

Julius-Maximilians-Universität Würzburg DE Germany (DE)

How to cite

APA:

Horbaschk, M., Benkert, A., Schumacher, C., Brunner, K., & Neder, R. (2009). Dynamics of strain relaxation studied by in situ x-ray diffraction immediately after layer heteroepitaxy. Applied Physics Letters, 94(21). https://doi.org/10.1063/1.3143630

MLA:

Horbaschk, M., et al. "Dynamics of strain relaxation studied by in situ x-ray diffraction immediately after layer heteroepitaxy." Applied Physics Letters 94.21 (2009).

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