Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer

Heilmann M, Munshi AM, Sarau G, Göbelt M, Tessarek C, Fauske VT, van Helvoort ATJ, Yang J, Latzel M, Hoffmann B, Conibeer G, Weman H, Christiansen S, Hoffmann B (2016)

Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2016

Journal

Nano Letters American Chemical Society

Publisher: American Chemical Society

Book Volume: 16

Pages Range: 3524-3532

Journal Issue: 6

DOI: 10.1021/acs.nanolett.6b00484

Abstract

The monolithic integration of wurtzite GaN on Si via metal-organic vapor phase epitaxy is strongly hampered by lattice and thermal mismatch as well as meltback etching. This study presents single-layer graphene as an atomically thin buffer layer for c-axis-oriented growth of vertically aligned GaN nanorods mediated by nanometer-sized AlGaN nucleation islands. Nanostructures of similar morphology are demonstrated on graphene-covered Si(111) as well as Si(100). High crystal and optical quality of the nanorods are evidenced through scanning transmission electron microscopy, micro-Raman, and cathodoluminescence measurements supported by finite-difference time-domain simulations. Current-voltage characteristics revealed high vertical conduction of the as-grown GaN nanorods through the Si substrates. These findings are substantial to advance the integration of GaN-based devices on any substrates of choice that sustains the GaN growth temperatures, thereby permitting novel designs of GaN-based heterojunction device concepts.

Authors with CRIS profile

Martin Heilmann Lehrstuhl für Experimentalphysik Manuela Göbelt
Björn Hoffmann Lehrstuhl für Experimentalphysik

Additional Organisation(s)

Graduiertenkolleg 1896/2 In situ Mikroskopie mit Elektronen, Röntgenstrahlen und Rastersonden Exzellenz-Cluster Engineering of Advanced Materials (EAM) Interdisziplinäres Zentrum, Center for Nanoanalysis and Electron Microscopy (CENEM)

Involved external institutions

Max-Planck-Institut für die Physik des Lichts (MPL) / Max Planck Institute for the Science of Light DE Germany (DE) University of New South Wales (UNSW) AU Australia (AU) NTNU Trondheim - Norwegian University of Science and Technology NO Norway (NO) Helmholtz-Zentrum Berlin für Materialien und Energie (HZB) DE Germany (DE)

How to cite

APA:

Heilmann, M., Munshi, A.M., Sarau, G., Göbelt, M., Tessarek, C., Fauske, V.T.,... Hoffmann, B. (2016). Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer. Nano Letters, 16(6), 3524-3532. https://doi.org/10.1021/acs.nanolett.6b00484

MLA:

Heilmann, Martin, et al. "Vertically Oriented Growth of GaN Nanorods on Si Using Graphene as an Atomically Thin Buffer Layer." Nano Letters 16.6 (2016): 3524-3532.

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