Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors

Khassanov A, Schmaltz T, Steinrück HP, Magerl A, Hirsch A, Halik M (2014)

Publication Type: Journal article, Report

Publication year: 2014

Journal

Book Volume: 1

Pages Range: n/a

Journal Issue: 9

URI: http://onlinelibrary.wiley.com/doi/10.1002/admi.201400238/abstract

DOI: 10.1002/admi.201400238

Abstract

Mixed self-assembled monolayers of C60-functionalized and different long-chained insulating phosphonic acids provide molecular scale non-volatile memory dielectrics for low-voltage organic thin-film transistors. The memory retention depends on the insulation of the C60 moiety and can be improved by embedding into the insulating SAM matrix and covering by corresponding insulating molecules.

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APA:

Khassanov, A., Schmaltz, T., Steinrück, H.-P., Magerl, A., Hirsch, A., & Halik, M. (2014). Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors. Advanced Materials Interfaces, 1(9), n/a. https://doi.org/10.1002/admi.201400238

MLA:

Khassanov, Artöm, et al. "Interface Engineering of Molecular Charge Storage Dielectric Layers for Organic Thin-Film Memory Transistors." Advanced Materials Interfaces 1.9 (2014): n/a.

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