InPBi single crystals grown by molecular beam epitaxy

Wang K, Gu Y, Zhou HF, Zhang L, Kang CZ, Wu M, Pan W, Lu PF, Gong Q, Wang S (2014)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2014

Journal

Scientific Reports Nature Publishing Group: Open Access Journals - Option B

Publisher: Nature Publishing Groups

Book Volume: 4

Article Number: 5449

DOI: 10.1038/srep05449

Abstract

InPBi was predicted to be the most robust infrared optoelectronic material but also the most difficult to synthesize within In-VBi (V = P, As and Sb) 25 years ago. We report the first successful growth of InPBi single crystals with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InPBi thin films reveal excellent surface, structural and optical qualities making it a promising new III-V compound family member for heterostructures. The Bi concentration is found to be 2.4 ± 0.4% with 94 ± 5% Bi atoms at substitutional sites. Optical absorption indicates a band gap of 1.23 eV at room temperature while photoluminescence shows unexpectedly strong and broad light emission at 1.4-2.7 μm which can't be explained by the existing theory.

Authors with CRIS profile

Mingjian Wu Lehrstuhl für Werkstoffwissenschaften (Mikro- und Nanostrukturforschung)

Additional Organisation(s)

Interdisziplinäres Zentrum, Center for Nanoanalysis and Electron Microscopy (CENEM)

Involved external institutions

Qufu Normal University / 曲阜师范大学 CN China (CN) Chinese Academy of Sciences (CAS) / 中国科学院 CN China (CN) Beijing University of Posts and Telecommunications (BUPT) / 北京邮电大学 CN China (CN)

How to cite

APA:

Wang, K., Gu, Y., Zhou, H.F., Zhang, L., Kang, C.Z., Wu, M.,... Wang, S. (2014). InPBi single crystals grown by molecular beam epitaxy. Scientific Reports, 4. https://doi.org/10.1038/srep05449

MLA:

Wang, Kai, et al. "InPBi single crystals grown by molecular beam epitaxy." Scientific Reports 4 (2014).

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