High-Mobility ZnO Nanorod Field-Effect Transistors by Self-Alignment and Electrolyte-Gating

Thiemann S, Gruber M, Lokteva I, Halik M, Zaumseil J (2013)

Publication Language: English

Publication Type: Journal article, Report

Publication year: 2013

Journal

Book Volume: 5

Pages Range: 1656–1662

Journal Issue: 5

URI: http://pubs.acs.org/doi/abs/10.1021/am3026739

DOI: 10.1021/am3026739

Abstract

High mobility, solution-processed field-effect transistors are important building blocks for flexible electronics. Here we demonstrate the alignment of semiconducting, colloidal ZnO nanorods by a simple solvent evaporation technique and achieve high electron mobilities in field-effect transistors at low operating voltages by electrolyte‐gating with ionic liquids. The degree of alignment varies with nanorod length, concentration and solvent evaporation rate. We find a strong dependence of electron mobility on the degree of alignment but less on the length of the nanorods. Maximum field-effect mobilities reach up to 9 cm2 V−1 s−1 for optimal alignment. Because of the low process temperature (150 °C), ZnO nanorod thin films are suitable for application on flexible polymer substrates.

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APA:

Thiemann, S., Gruber, M., Lokteva, I., Halik, M., & Zaumseil, J. (2013). High-Mobility ZnO Nanorod Field-Effect Transistors by Self-Alignment and Electrolyte-Gating. ACS Applied Materials and Interfaces, 5(5), 1656–1662. https://doi.org/10.1021/am3026739

MLA:

Thiemann, Stefan, et al. "High-Mobility ZnO Nanorod Field-Effect Transistors by Self-Alignment and Electrolyte-Gating." ACS Applied Materials and Interfaces 5.5 (2013): 1656–1662.

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