Nasr I, Knapp H, Aufinger K, Weigel R, Kissinger D (2014)
Publication Type: Journal article
Publication year: 2014
Publisher: IEEE
Book Volume: 62
Pages Range: 2118-2131
Journal Issue: 9
DOI: 10.1109/TMTT.2014.2337289
This work presents a highly integrated transmitter (TX) and receiver (RX) chipset operating from 50 to 100 GHz. The local oscillator (LO) is realized using a high output power millimeter-wave integrated frequency synthesizer with an octave output frequency range. The proposed low-complexity discrete tuned synthesizer architecture employs a single wide-tuning range voltage-controlled oscillator core and a single-sideband mixer, which can be switched to operate as a LO amplifier. An ultra broadband variable gain amplifier, with a gain control range $>{hbox {25 dB}}$, is used at the output of the synthesizer to provide a tunable output power. A maximum output power from $+{hbox{7}}$ to $+{hbox{12 dBm}}$ and an output phase noise from $-{hbox{83}}$ to $-{hbox{96 dBc/Hz}}$ at 1-MHz offset are measured over the complete output frequency range. Moreover, a spurious suppression $>{hbox {22 dB}}$ is achieved over the entire synthesizer's tuning range. The RX shows a conversion gain $>{hbox {19 dB}}$ and a noise figure $< {hbox {9.5 dB}}$ from 50 to 100 GHz. The TX's measured saturated output power is from $ +{hbox{6}}$ to $-{hbox{1 dBm}}$ over the entire frequency range. The complete chipset is realized in a commercial low-cost SiGe:C technology with an $f- {t}/f_{max}$ of ${hbox{170/250 GHz}}$. Each of the TX and RX chips including the frequency synthesizers draw a current of 370 mA from a 3.3-V supply.
APA:
Nasr, I., Knapp, H., Aufinger, K., Weigel, R., & Kissinger, D. (2014). A 50-100-GHz Highly Integrated Octave-Bandwidth Transmitter and Receiver Chipset in 0.35um SiGe Technology. IEEE Transactions on Microwave Theory and Techniques, 62(9), 2118-2131. https://doi.org/10.1109/TMTT.2014.2337289
MLA:
Nasr, Ismail, et al. "A 50-100-GHz Highly Integrated Octave-Bandwidth Transmitter and Receiver Chipset in 0.35um SiGe Technology." IEEE Transactions on Microwave Theory and Techniques 62.9 (2014): 2118-2131.
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