A broadband 24 GHz bandwidth 54 dB gain 180-mW amplifier employing common-collector combinded with capacitive controlled cross-coupled feedback in 0.35 um SiGe technology

Radwan A, Fischer G, Weigel R, Kissinger D (2013)

Publication Type: Conference contribution

Publication year: 2013

Pages Range: 115-118

Conference Proceedings Title: IEEE Bipolar/BiCMOS Circuits and Technology Meeting

Event location: Bordeaux, France

DOI: 10.1109/BCTM.2013.6798157

Authors with CRIS profile

Ahmed Radwan Lehrstuhl für Technische Elektronik (LTE) Georg Fischer Professur für Technische Elektronik Robert Weigel Lehrstuhl für Technische Elektronik (LTE) Dietmar Kissinger Lehrstuhl für Technische Elektronik (LTE)

How to cite

APA:

Radwan, A., Fischer, G., Weigel, R., & Kissinger, D. (2013). A broadband 24 GHz bandwidth 54 dB gain 180-mW amplifier employing common-collector combinded with capacitive controlled cross-coupled feedback in 0.35 um SiGe technology. In IEEE Bipolar/BiCMOS Circuits and Technology Meeting (pp. 115-118). Bordeaux, France.

MLA:

Radwan, Ahmed, et al. "A broadband 24 GHz bandwidth 54 dB gain 180-mW amplifier employing common-collector combinded with capacitive controlled cross-coupled feedback in 0.35 um SiGe technology." Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Bordeaux, France 2013. 115-118.

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