Atomic Layer Deposition from Dissolved Precursors

Wu Y, Döhler D, Barr MKS, Oks E, Wolf M, Santinacci L, Bachmann J (2015)

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2015

Journal

Nano Letters American Chemical Society

Publisher: American Chemical Society

Book Volume: 15

Pages Range: 6379-6385

DOI: 10.1021/acs.nanolett.5b01424

Abstract

We establish a novel thin film deposition technique by transferring the principles of atomic layer deposition (ALD) known with gaseous precursors toward precursors dissolved in a liquid. An established ALD reaction behaves similarly when performed from solutions. "Solution ALD" (sALD) can coat deep pores in a conformal manner. sALD offers novel opportunities by overcoming the need for volatile and thermally robust precursors. We establish a MgO sALD procedure based on the hydrolysis of a Grignard reagent.

Authors with CRIS profile

Yanlin Wu Lehrstuhl für Anorganische und Allgemeine Chemie Dirk Döhler Lehrstuhl für Anorganische und Allgemeine Chemie Maissa Barr
Julien Bachmann Lehrstuhl für Chemistry of thin film materials

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials (EAM)

Involved external institutions

Aix-Marseille University / Aix-Marseille Université FR France (FR) Universität Hamburg (UHH) DE Germany (DE)

How to cite

APA:

Wu, Y., Döhler, D., Barr, M.K.S., Oks, E., Wolf, M., Santinacci, L., & Bachmann, J. (2015). Atomic Layer Deposition from Dissolved Precursors. Nano Letters, 15, 6379-6385. https://doi.org/10.1021/acs.nanolett.5b01424

MLA:

Wu, Yanlin, et al. "Atomic Layer Deposition from Dissolved Precursors." Nano Letters 15 (2015): 6379-6385.

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