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Solution-processed single-crystalline organic transistors on patterned ultrathin gate insulators

Tsurumi J, Amin AY, Okamoto T, Mitsui C, Takimiya K, Matsui H, Halik M, Takeya J (2014)

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Publication Language: English

Publication Type: Journal article, Report

Publication year: 2014

Journal

Book Volume: 15

Pages Range: 1184-1188

Journal Issue: 6

URI: http://www.sciencedirect.com/science/article/pii/S156611991400072X

DOI: 10.1016/j.orgel.2014.02.028

Abstract

Single-crystalline organic transistors of 3,11-didecyl-dinaphtho[2,3-d:2′,3′-d′]benzo[1,2-b:4,5-b′]dithiophene (C10-DNBDT-NW) and 2,9-didecyl-dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C10-DNTT) were fabricated by solution processes on top of the patterned hybrid ultrathin gate dielectrics consisting of 3.6 nm-thick aluminum oxide and self-assembled monolayers (SAMs). Due to the excellent crystallinity of the channel films, bottom-gate and top-contact field-effect transistors exhibited the average field-effect mobility of 3.7 cm2/V s and 4.3 cm2/V s for C10-DNBDT-NW and C10-DNTT, respectively. These are the first successful devices of solution-processed single-crystalline transistors on ultrathin gate dielectrics with the mobility above 1 cm2/V s, opening the way to develop low-power-consumption and high-performance printed circuits.

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How to cite

APA:

Tsurumi, J., Amin, A.Y., Okamoto, T., Mitsui, C., Takimiya, K., Matsui, H.,... Takeya, J. (2014). Solution-processed single-crystalline organic transistors on patterned ultrathin gate insulators. Organic Electronics, 15(6), 1184-1188. https://doi.org/10.1016/j.orgel.2014.02.028

MLA:

Tsurumi, J., et al. "Solution-processed single-crystalline organic transistors on patterned ultrathin gate insulators." Organic Electronics 15.6 (2014): 1184-1188.

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