Walz MM, Vollnhals F, Schirmer M, Steinrück HP, Marbach H (2011)
Publication Type: Journal article
Publication year: 2011
Original Authors: Walz M.-M., Vollnhals F., Schirmer M., Steinrück H.-P., Marbach H.
Publisher: Royal Society of Chemistry
Book Volume: 13
Pages Range: 17333-17338
Journal Issue: 38
DOI: 10.1039/c1cp20865a
Upon exposure to Fe(CO) , the formation of pure cubic Fe nanocrystals with dimensions up to ∼75 nm is reported on ultra-thin SiO films (thickness ≈ 0.5 nm) on Si(001), which have been prepared in situ under UHV conditions. The active centers for initial decomposition of Fe(CO) resulting in the growth of the Fe clusters are proposed to be SiO sites. After nucleation at these sites, further crystal growth is observed due to autocatalytic dissociation of Fe(CO) at room temperature. The density of the Fe clusters can be increased by irradiating the surface with a focused electron beam (15 keV) prior to gas exposure. The formation of the active SiO sites upon electron irradiation is attributed to oxygen desorption via the Knotek-Feibelman mechanism. © 2011 the Owner Societies.
APA:
Walz, M.-M., Vollnhals, F., Schirmer, M., Steinrück, H.-P., & Marbach, H. (2011). Generation of clean iron nanocrystals on an ultra-thin SiO x film on Si(001). Physical Chemistry Chemical Physics, 13(38), 17333-17338. https://doi.org/10.1039/c1cp20865a
MLA:
Walz, Marie-Madeleine, et al. "Generation of clean iron nanocrystals on an ultra-thin SiO x film on Si(001)." Physical Chemistry Chemical Physics 13.38 (2011): 17333-17338.
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