Preu S, Renner F, Malzer S, Döhler G, Wang L, Hanson M, Gossard A, Wilkinson T, Brown ER (2007)
Publication Type: Journal article, Original article
Publication year: 2007
Original Authors: Preu S., Renner F.H., Malzer S., Dohler G.H., Wang L.J., Hanson M., Gossard A.C., Wilkinson T.L.J., Brown E.R.
Publisher: American Institute of Physics (AIP)
Book Volume: 90
Article Number: 212115
Journal Issue: 21
DOI: 10.1063/1.2743400
The authors report on photomixing terahertz sources that overcome the transit time versus RC -time trade-off and allow for independent optimization of both of them, using a n-i-p-n-i-p superlattice. Furthermore, they take advantage of ballistic transport for reduced transit times. Apart from more favorable material parameters, In(Al)GaAs photomixers benefit from the advanced telecommunication laser technology around 1.55 μm as compared to GaAs. In such devices, a terahertz-power output of 1 μW has been achieved at 0.4 THz at a photocurrent of 3.8 mA. A comparison between corresponding GaAs- and InGaAs-based n-i-p-n-i-p photomixers reveals an improvement of performance by at least an order of magnitude for the latter one. © 2007 American Institute of Physics.
APA:
Preu, S., Renner, F., Malzer, S., Döhler, G., Wang, L., Hanson, M.,... Brown, E.R. (2007). Efficient terahertz emission from ballistic transport enhanced n-i-p-n-i-p superlattice photomixers. Applied Physics Letters, 90(21). https://doi.org/10.1063/1.2743400
MLA:
Preu, Sascha, et al. "Efficient terahertz emission from ballistic transport enhanced n-i-p-n-i-p superlattice photomixers." Applied Physics Letters 90.21 (2007).
BibTeX: Download