Concept of a Molecular Charge Storage Dielectric Layer For Organic Thin-Film Memory Transistors

Burkhardt M, Jedaa A, Novak M, Ebel A, Voitchovsky K, Stellacci F, Hirsch A, Halik M (2010)

Publication Language: English

Publication Type: Journal article, Original article

Publication year: 2010

Journal

Advanced Materials Wiley-VCH Verlag

Original Authors: Burkhardt M., Jedaa A., Novak M., Ebel A., Voitchovsky K., Stellacci F., Hirsch A., Halik M.

Publisher: Wiley-VCH Verlag

Book Volume: 22

Pages Range: 2525-2528

Journal Issue: 23

URI: http://onlinelibrary.wiley.com/doi/10.1002/adma.201000030/abstract

DOI: 10.1002/adma.201000030

Abstract

(Figure Presented) A mixed self-assembled monolayer containing aliphatic and electron-accepting (C ) components is employed as an ultrathin molecular gate dielectric to facilitate reversible, nonvolatile electronic memory functionality in organic transistors at low supply voltages. By adjusting the stoichiometry of the monolayer components, the transistor and memory characteristics can be tuned. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Authors with CRIS profile

Andreas Hirsch Lehrstuhl für Organische Chemie II Marcus Halik Professur für Werkstoffwissenschaften (Polymerwerkstoffe)

Additional Organisation(s)

Exzellenz-Cluster Engineering of Advanced Materials (EAM)

Involved external institutions

Massachusetts Institute of Technology (MIT) US United States (USA) (US)

How to cite

APA:

Burkhardt, M., Jedaa, A., Novak, M., Ebel, A., Voitchovsky, K., Stellacci, F.,... Halik, M. (2010). Concept of a Molecular Charge Storage Dielectric Layer For Organic Thin-Film Memory Transistors. Advanced Materials, 22(23), 2525-2528. https://doi.org/10.1002/adma.201000030

MLA:

Burkhardt, Martin, et al. "Concept of a Molecular Charge Storage Dielectric Layer For Organic Thin-Film Memory Transistors." Advanced Materials 22.23 (2010): 2525-2528.

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