Nanocrystal V2O5 thin film as hole-extraction layer in normal architecture organic solar cells

Wang H, Li N, Güldal NS, Brabec C (2012)

Publication Language: English

Publication Status: Published

Publication Type: Journal article, Original article

Publication year: 2012

Journal

Organic Electronics Elsevier

Book Volume: 13

Pages Range: 3014-3021

Journal Issue: 12

DOI: 10.1016/j.orgel.2012.08.007

Abstract

Nanocrystal VO dispersion processed thin films are introduced as efficient hole extraction interlayer in normal architecture P3HT:PCBM solar cells. Both thin and rather thick interlayers are studied and demonstrated to work properly in organic photovoltaic. Nanocrystal V OVO layers effectively block electrons and effectively extract holes at the ITO anode. Very constant and high V (above 0.56 V) are easily achieved. Comparable J and PCE are demonstrated for nanocrystal dispersion-processed devices when compared with amorphous sol-gel processed devices. The excellent functionality of nanocrystal VO interlayers in Si-PCPDTBT:PCBM devices further demonstrates the broad application potential of this material class for photovoltaic applications. © 2012 Elsevier B.V. All rights reserved.

Authors with CRIS profile

Hao Wang Professur für Werkstoffwissenschaften (Polymerwerkstoffe) Ning Li Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET) Nusret Sena Richter Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET) Christoph Brabec Institute Materials for Electronics and Energy Technology (i-MEET) (i-MEET)

How to cite

APA:

Wang, H., Li, N., Güldal, N.S., & Brabec, C. (2012). Nanocrystal V2O5 thin film as hole-extraction layer in normal architecture organic solar cells. Organic Electronics, 13(12), 3014-3021. https://doi.org/10.1016/j.orgel.2012.08.007

MLA:

Wang, Hao, et al. "Nanocrystal V2O5 thin film as hole-extraction layer in normal architecture organic solar cells." Organic Electronics 13.12 (2012): 3014-3021.

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